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技術名稱 Technology
發明人 Inventor
黃柏仁, 沙惟能, 周賢鎧,
所有權人 Asignee 國立臺灣科技大學

專利國家 Country 申請號 Application No. 專利號 Patent No. 中心案號 Serial No.
美國 16/865,410 申請中 1080065US0
中華民國 109109570 申請中 1080065TW0
  點閱數:84

技術摘要:
優異的電化學超級電容器具有高比電容、高穩定性以及高的功率和能量密度的性能。在這項研究中,我們首次使用高導電性之氮摻雜超奈米晶鑽石材料(Nitrogen-doped ultra-nanocrystalline diamond; N-UNCD)製造了具有高比電容的電化學超級電容器,並且以循環伏安法和恆電流充電–放電方法分析鑽石電極的電化學性質。所研製以一層N-UNCD膜為電極製作電化學超級電容器之比電容為~100 F·g–1,以間斷市成長堆疊少數層N-UNCD材料電極的最大比電容可達243 F·g–1,比其他形式的鑽石電極材料報導的比電容要高得多。即使在1.0M KOH電解質水溶液中進行2000次充放電循環後,約95%的比電容也是可保持的。從堆疊少數層N-UNCD獲得的比電容比其他種類的鑽石電極高約35,000倍。這些結果表明,少數層N-UNCD具有高比電容,優異的循環穩定性和良好的倍率性能,優於幾個相關的碳基材料電極與金屬氧化物電極。
Excellent performance of electrochemical supercapacitors can be accomplished by high specific capacitances, stability as well as high power and energy densities. In this work, we have fabricated electrochemical supercapacitors with high specific capacitance using highly conducting nitrogen doped ultra-nanocrystalline diamond materials (N-UNCD) for the first time. Electrochemical properties of the diamond electrodes were analyzed by cyclic voltammetry and galvanostatic charge–discharge methods. The specific capacitance of supercapacitor electrodes with one layer of N-UNCD were ~100 F·g–1. Notably, the few layer N-UNCD materials made from intermittent depositions exhibited a maximum specific capacitance of 243 F·g–1, which is overwhelmingly better than the other form of diamond electrode materials ever reported. About 95% of specific capacitance is retainable even after 2000 charge–discharge cycles in 1.0 M KOH aqueous electrolyte solution. The attained specific capacitance from few layer N-UNCD is approximately 35,000 times higher than the other kind of diamond electrodes. These results show that the few layer N-UNCD have high specific capacitance, excellent cycle stability, and good rate capability, which better than several related carbon-based and metal oxide electrodes.

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