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技術名稱 Technology
發明人 Inventor
洪勇智, 李三良,
所有權人 Asignee 國立臺灣科技大學

專利國家 Country 申請號 Application No. 專利號 Patent No. 中心案號 Serial No.
中華民國 101127311 I460121 1010044TW0
  點閱數:901

技術摘要:
We have developed several top-down approaches in order to realize silicon nanostructure/microstructure patterns and heterojunction patterns which contain silicon nanostructures/microstructures. All patterning approaches are based on the same concept, protecting part of SiNWs from the attack during chemical etching. Different fabrication sequences lead to different resulting structures. Silicon microstructure patterns are realized with pre-patterning scheme (resist patterning prior to SiNW formation), while the other structures are realized with post-patterning scheme (resist patterning after SiNW formation).

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